| Specifications.Imaging
Modes: SEI and BSE. |
| Accel. Voltage: 3-35kV.
Resolution: 4nm |
Source: W |
Ancillary Equipment.Digital
image acquisition system
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Techniques;SEM;.XEDS
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| JXA-840
scanning electron microscope |
| Applications: |
XEDS, SEI, BSE imaging |
| Accelerating Voltage: |
3kV to 35kV |
| Filament: |
W |
| Resolution: |
4 nm |
| XEDS System: |
Ultra-thin Window Si-Li X-ray detector
(active area = 10 mm^2) capable of detecting elements with Z >4.Oxford
detector with Oxford acquisition software |
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